PowerAmerica 1200V SiC MOSFET Process
PowerAmerica has developed Inversion‐mode and Accumulation‐mode 1.2 kV SiC Power MOSFETs and successfully fabricated them at the 150-mm SiC X‐Fab foundry in Lubbock Texas. The PowerAmerica devices exhibit on‐resistance, threshold voltage, leakage current, and breakdown voltage competitive with commercially available devices. PowerAmerica has also successfully fabricated at XFab a unique 1.2 kV SiC Power MOSFET structure with a fully rated integrated JBS diode. Inquire with PowerAmerica for licensing opportunities. This technology may become available to non-members at a later date.